英德
有道
百度
谷歌
图片
维基
百科
外延片
[电子] epitaxial wafer
epitaxial slice
epitaxial slice
- 利用选择性部分无序技术获得了单片外延片上不同区域的多量子阱在结构与性质上的差异。
The differences in the structures and properties of multiple quantum well between different areas on a wafer were achieved using selective partial disordering. - 探讨了外延片应力与沟道结构的相关性，研究了沟道失配应力对电性能的影响机理。
The relativity of the wafer strain and channel structure was described, and the influence principle of the mismatch-strain of the channel on the electronic property were studied. - 现在正寻求一位有多年丰富的高亮度蓝光外延片生长技术经验，并能解决各种技术困难的外延技术总监/部长。
We are now looking for an EPI Technology Director who has rich hands on experiences in high bright blue LED epitaxial wafer growth for many years and can solve various technological problems.
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