复合中心 [电子] recombination center
- 延长曝光不仅增加新的复合中心,还改变原有复合中心的俘获截面。
Prolonged exposure not only increased new recombination center but also changed the capture cross section of original recombination centers. - 探讨了快恢复二极管制造过程中, 选择适当的复合中心能级去调整快恢复二极管软度因子和软度的可行性。
In this paper, the probability for adjusting silicon fast recovery diode soft factors and softness by selecting proper recombination center in process is analyzed. - 该现象可解释为因引入磷杂质扩大了缺陷态密度而带来了非辐射复合中心数增多。
This phenomenon may be explained from that the increase in defect state density due to phosphorous impurity results in the increase in non-radiation recombination centers.